Memristors: A Spin–Orbit‐Torque Memristive Device (Adv. Electron. Mater. 4/2019). (9th April 2019)

• Record Type: Journal Article
• Authors: Zhang, Shuai; Luo, Shijiang; Xu, Nuo; Zou, Qiming; Song, Min; Yun, Jijun; Luo, Qiang; Guo, Zhe; Li, Ruofan; Tian, Weicheng; Li, Xin; Zhou, Hengan; Chen, Huiming; Zhang, Yue; Yang, Xiaofei; Jiang, Wanjun; Shen, Ka; Hong, Jeongmin; Yuan, Zhe; Xi, Li; Xia, Ke; Salahuddin, Sayeef; Dieny, Bernard; You, Long
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 4(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-04-09
• Subjects: artificial synapses -- domain walls -- memristors -- spin–orbit torque; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201970022
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract : A domain wall can be driven back and forth in a continuous manner in a ferromagnetic (FM) layer by applying in‐plane positive or negative current pulses along the heavy‐metal (HM) layer, as reported by Long You and co‐workers in article number1800782 . Utilizing the spin‐orbit torque that the current exerts on the CoFeB magnetization results in memristive (synapse‐like) functions.