2D Materials: Lattice Structure and Bandgap Control of 2D GaN Grown on Graphene/Si Heterostructures (Small 14/2019). Issue 14 (5th April 2019)

• Record Type: Journal Article
• Authors: Wang, Wenliang; Li, Yuan; Zheng, Yulin; Li, Xiaochan; Huang, Liegen; Li, Guoqiang
• Is Part Of: Small. Volume 15:Issue 14(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-04-05
• Subjects: 2D GaN -- bandgap -- lattice structures and bandgaps control -- theoretical calculations; Nanotechnology -- Periodicals; Nanoparticles -- Periodicals; Microtechnology -- Periodicals; 620.5
• DOI: 10.1002/smll.201970076
• Languages: English
• ISSNs: 1613-6810

Abstract

Abstract : In article number1802995, Guoqiang Li and co‐workers demonstrate a 2D GaN with wellcontrolled lattice structure and bandgap on graphene/Si hetero‐structure. The bandgap for 2D GaN in P63 MC and R3m structure is determined to be ≈4.65 and ≈4.18 eV, respectively. The 2D GaN shows a great potential for the development of deep ultraviolet devices.