Importance of Oxygen Partial Pressure in Annealing NiO Film for High Efficiency Inverted Perovskite Solar Cells. Issue 4 (23rd January 2019)

• Record Type: Journal Article
• Authors: Zhao, Xing; Chen, Jiangzhao; Park, Nam‐Gyu
• Is Part Of: Solar RRL. Volume 3:Issue 4(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-01-23
• Subjects: annealing atmosphere -- inverted -- NiO -- oxygen partial pressure -- perovskite solar cell; Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.201800339
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : The effect of annealing atmosphere and importance of oxygen partial pressure upon annealing NiO film for achieving high efficiency inverted perovskite solar cells (PSCs) is reported. The solution‐process NiO films are deposited on an FTO (fluorine‐doped tin oxide) substrate and annealed at 400 °C under different atmospheres of air, O2, N2, and Ar. The devices using air‐ and O2 ‐annealed NiO films show better photovoltaic performance than the N2 ‐ and Ar‐annealed ones, mostly due to large difference in photocurrent density ( J sc ) of ≈20 mA cm −2 for air and O2 vs ≈15 mA cm −2 for N2 and Ar. Oxygen‐excess condition leads to more p ‐type characteristics along with better electrical and interfacial properties, leading to higher photovoltaic performance. When comparing air and O2 condition, the air‐annealed NiO film shows slightly better power conversion efficiency (PCE) (15.68% for air vs. 14.93% for O2 ), being indicative of importance of oxygen partial pressure. By carefully modifying oxygen content, the best photovoltaic performance is achieved from the NiO film annealed at the O2 /(O2 +N2 ) ratio of 30%, delivering a PCE of 16.32%. Abstract : In an inverted planar perovskite solar cell employing a hole transporting NiO thin film, photovoltaic performance is found to depend significantly on annealing atmosphere when preparing the NiO film. The best power conversion efficiency can be achieved from the NiO film annealed at the oxygen partial pressure of 30% in mixture of O2 and N2 .