Enhancing the thermoelectric performance of Cu1.8S by Sb/Sn co-doping and incorporating multiscale defects to scatter heat-carrying phonons. Issue 14 (22nd March 2019)

• Record Type: Journal Article
• Authors: Tang, Huaichao; Zhuang, Hua-Lu; Cai, Bowen; Asfandiyar, ; Dong, Jinfeng; Sun, Fu-Hua; Li, Jing-Feng
• Is Part Of: Journal of materials chemistry. Volume 7:Issue 14(2019)
• Page Start: 4026
• Page End: 4031
• Publication Date: 2019-03-22
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c9tc01096c
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : (Sb, Sn) co-doping optimizes the carrier concentration of Cu1.8 S and constructs multiscale defects, leading to ZT max of 1.2 at 773 K. Abstract : Cu-based chalcogenides have attracted increasing attention as a potential thermoelectric material due to their unique structural features, high element abundance, and low toxicity. In this paper, a series of Cu1.8 Sb x Sn y S compositions (0.01 < x < 0.04, 0.015 < y < 0.045) were prepared by a simple method combining mechanical alloying (MA) and spark plasma sintering (SPS). The results demonstrate that Sb/Sn co-doping can optimize the hole concentration and substantially improve the dimensionless figure of merit ( ZT ) of copper–sulfide Cu1.8 S. The highest ZT, up to 1.2 at 773 K, was realized for the Cu1.8 Sb0.02 Sn0.03 S sample and maintained a high power factor of 975 μW m −1 K −2 . The reduction in thermal conductivity was linked to the heterogeneous phase of Cu12 Sb4 S13 and Cu4 SnS4 . Remarkably, after four testing cycles, the variation in ZT was less than 2%, indicating a good stability of the Sb/Sn co-doped Cu1.8 S materials.