Electron and hole in-plane g-factors in single InAs quantum rings. (September 2015)

• Record Type: Journal Article
• Authors: Kaji, R; Tominaga, T; Wu, Y-N; Cheng, S-J; Adachi, S
• Is Part Of: Journal of physics. Number 647(2015)
• Publication Date: 2015-09
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/647/1/012011
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: The electron and hole in-plane g-factors were studied in individual InAs/GaAs quantum rings (QRs). From the magneto-photoluminescence measurements under a transverse magnetic field, we evaluated the in-plane g-factors of electron and hole spins by rotating the sample systematically along the crystal growth axis. The experimental results indicate that the in-plane and the out-of-plane anisotropies in hole g-factor are larger than those of electron g-factor, and the value of the hole in-plane g-factor varies largely from QR to QR while the electron g-factor is almost a constant value. From the model calculation considering the effects of shape anisotropies and uniaxial stress, we examined the correlation between the in-plane g-factors and the degree of valence band mixing. Further, the experimentally obtained trend in g-factors was in agreement qualitatively with theoretical consideration.