Fabrication and Characterization of Fully Transparent ZnO Thin-Film Transistors and Self-Switching Nano-Diodes. (September 2015)

• Record Type: Journal Article
• Authors: Sun, Y; Ashida, K; Sasaki, S; Koyama, M; Maemoto, T; Sasa, S; Kasai, S; Iñiguez-de-la-Torre, I; González, T
• Is Part Of: Journal of physics. Number 647(2015)
• Publication Date: 2015-09
• Subjects: Physics -- Congresses; 530.5
• DOI: 10.1088/1742-6596/647/1/012068
• Languages: English
• ISSNs: 1742-6588

Abstract

Abstract: Fully transparent zinc oxide (ZnO) based thin-film transistors (TFTs) and a new type of rectifiers calls self-switching nano-diodes (SSDs) were fabricated on glass substrates at room temperature by using low resistivity and transparent conducting Al- doped ZnO (AZO) thin-films. The deposition conditions of AZO thin-films were optimized with pulsed laser deposition (PLD). AZO thin-films on glass substrates were characterized and the transparency of 80% and resistivity with 1.6*10 -3 Ωcm were obtained of 50 nm thickness. Transparent ZnO-TFTs were fabricated on glass substrates by using AZO thin-films as electrodes. A ZnO-TFT with 2 μm long gate device exhibits a transconductance of 400 μS/mm and an ON/OFF ratio of 2.8*10 7 . Transparent ZnO-SSDs were also fabricated by using ZnO based materials and clear diode-like characteristics were observed.