Cite
HARVARD Citation
Mizubayashi, W. et al. (2015). Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. Solid-state electronics. pp. 62-66. [Online].
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Mizubayashi, W. et al. (2015). Impact of fin length on threshold voltage modulation by back bias for Independent double-gate tunnel fin field-effect transistors. Solid-state electronics. pp. 62-66. [Online].