Band alignment of ZnO/ZnS heterojunction prepared through magnetron sputtering and measured by X-ray photoelectron spectroscopy. (December 2015)

• Record Type: Journal Article
• Authors: Gu, Xiuquan; Zhang, Shuang; Zhao, Yulong; Qiang, Yinghuai
• Is Part Of: Vacuum. Volume 122:Part A(2015)
• Page Start: 6
• Page End: 11
• Publication Date: 2015-12
• Subjects: ZnO -- ZnS -- Heterojunction -- Band offset -- Thin films; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2015.09.005
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: Abstract: In this study, three film samples (ZnO, ZnS and ZnO/ZnS heterojunction) were prepared by a facile magnet sputtering deposition method. All the films exhibited the good crystal quality and smooth surface. Further, the X-ray photoelectron spectroscopy (XPS) was employed to examine the band offset between ZnO and ZnS layers at the interface. It was demonstrated that the ZnO/ZnS bilayers exhibited a II-type band alignment with a valence-band (VB) offset of 1.04 eV, which was accordance with the calculation results. It thus suggested that such a heterostructure was suitable for application as a photocatalyst or photoanode for water splitting or photoelectric conversion. Highlights: ZnO/ZnS HJs were fabricated via a facile magnetron sputtering process. Band alignment was investigated by X-ray photoelectron spectroscopy. The HJ exhibited a type-II alignment. The VBO was calculated to be 1.04 eV while CBO was 1.68 eV.