The formation of CuO nano-wire structures to enhance the optoelectronic properties of Al doped ZnO layers. (December 2015)

• Record Type: Journal Article
• Authors: Lin, Yen-Sheng; Huang, Yung-Hao; Huang, Wei-Che
• Is Part Of: Vacuum. Volume 122:Part A(2015)
• Page Start: 143
• Page End: 146
• Publication Date: 2015-12
• Subjects: Transparent conductive oxides (TCO) -- Aluminum-doped zinc oxide (AZO) -- CuO nano-wires -- RF magnetron sputtering; Vacuum -- Periodicals; 621.55
• DOI: 10.1016/j.vacuum.2015.09.022
• Languages: English
• ISSNs: 0042-207X

Abstract

Abstract: In this study, CuO nano-wire structures are first observed on the roughed surface of AZO seed layers. The CuO nano-wire structures have different densities with various Cu deposited time. After the deposition of a AZO capping layer, the structure and optoelectronic properties of the finished AZO/CuO nano-wires/AZO thin film are studied. Structural characterization by high-resolution transmission electron microscopy (HRTEM) indicates that the CuO nano-wires are mainly single crystal phases. The optimum density for the CuO nano-wire structures is achieved by depositing Cu at 50 s. This gives the lowest resistance of 1.4 × 10 −4 Ω-cm and the average transmittance from 400 to 800 nm is about 84%. The best figure of merit for the AZO/CuO nano-wires/AZO layer is 1.54 × 10 −2 (Ω −1 ), which shows that the application of AZO on transparent conductive electrode is viable. Highlights: CuO nano-wire structures are first observed on the roughed surface of AZO seed layers. CuO nano-wires are mainly single crystal phases. Improvement of the optoelectronic properties on the AZO thin film by the optimum density of CuO nano-wire structures. Promoting the application of AZO thin film on transparent conductive oxide.