Cite
HARVARD Citation
Ferrandis, P. et al. (2019). Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors. Semiconductor science and technology. p. . [Online].
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Ferrandis, P. et al. (2019). Gate length effect on trapping properties in AlGaN/GaN high-electron-mobility transistors. Semiconductor science and technology. p. . [Online].