Cite
HARVARD Citation
Cai, Y. et al. (2019). Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor science and technology. p. . [Online].
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Cai, Y. et al. (2019). Overgrowth and characterization of (11-22) semi-polar GaN on (113) silicon with a two-step method. Semiconductor science and technology. p. . [Online].