Carrier dynamics in silicon nanowires studied via femtosecond transient optical spectroscopy from 1.1 to 3.5 eV. (13th March 2019)

• Record Type: Journal Article
• Authors: Tian, Lin 田琳; Di Mario, Lorenzo; Sivan, Aswathi K; Catone, Daniele; O'Keeffe, Patrick; Paladini, Alessandra; Turchini, Stefano; Martelli, Faustino
• Is Part Of: Nanotechnology. Volume 30:Number 21(2019)
• Publication Date: 2019-03-13
• Subjects: nanowires -- ultrafast spectroscopy -- carrier dynamics -- silicon; Nanotechnology -- Periodicals; Nanotechnology -- Periodicals; Nanotechnology; Publications périodiques; Nanotechnologies; Periodicals; 620.5
• DOI: 10.1088/1361-6528/ab044a
• Languages: English
• ISSNs: 0957-4484

Abstract

Abstract: We present femtosecond transient transmission (or absorbance) measurements in silicon nanowires in the energy range 1.1–3.5 eV, from below the indirect band-gap to above the direct band-gap. Our pump-probe measurements allow us to give a complete picture of the carrier dynamics in silicon. In this way we perform an experimental study with a spectral completeness that is lacking in the whole literature on carrier dynamics in silicon. A particular emphasis is given to the dynamics of the transient absorbance at the energies relative to the direct band gap at 3.3 eV. Indeed, the use of pump energies below and above 3.3 eV allowed us to disentangle the dynamics of electrons and holes in their respective bands. The band gap renormalization of the direct band gap is also investigated for different pump energies. A critical discussion is given on the results below 3.3 eV where phonon-assisted processes are required in the optical transitions.