Cite
HARVARD Citation
Wang, B. et al. (2019). Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments. Semiconductor science and technology. p. . [Online].
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Wang, B. et al. (2019). Enhanced optical and electrical performance of Ge1−xSnx/Ge/Si(100) (x = 0.062) semiconductor via inductively coupled H2 plasma treatments. Semiconductor science and technology. p. . [Online].