Identification of Mn dopant in the structure of TlInS2 layered semiconductor. (22nd February 2019)

• Record Type: Journal Article
• Authors: Okumuş, Esra; Tokdemir Öztürk, Sibel; Chumakov, Yurii M; Nadjafov, Arzu I; Mamedov, Nazim T; Mammadov, Tofiq G; Wakita, Kazuki; Shim, Yong-Gu; Mikailzade, Faik A; Seyidov, MirHasan Yu
• Is Part Of: Materials research express. Volume 6:Number 5(2019)
• Publication Date: 2019-02-22
• Subjects: electron paramagnetic resonance -- x-ray diffraction -- hyperfine structure -- layered semiconductors; Materials science -- Research -- Periodicals; Materials science -- Periodicals; 620.11
• DOI: 10.1088/2053-1591/ab063e
• Languages: English
• ISSNs: 2053-1591

Abstract

Abstract: The structure of TlInS2 layered semiconductor doped with 0.3% concentration of Mn impurity has been investigated by using x-ray diffraction (XRD) and Electron Paramagnetic Resonance (EPR) spectroscopy. The experiments were carried out to probe the local environment surrounding the Mn dopants in the crystal structure of TlInS2 . The interatomic distances between Mn - ions and neighboring atoms and effective valence of Mn - ions were determined. XRD - investigation indicated that the effective valence of Mn ions in TlInS2 is close to +4. It has been obtained that the EPR spectra of TlInS2 + 0.3% Mn consist of a broad resonance line stemming from interacting spins and a set of hyperfine structure lines originating from the paramagnetic Mn 2 + ions. No EPR signal was observed in undoped TlInS2 semiconductors. The spectra revealed the incorporation of the paramagnetic Mn - cations with low symmetry site in the structure of host TlInS2 semiconductor crystal. The spin - Hamiltonian parameters of paramagnetic Mn - centers have been estimated ( g = 1.9982 and hyperfine splitting constant A z = 88 G, where z axis is perpendicular to layers). The observation of low field broad resonance lines indicates the magnetic inhomogeneity of the sample. It is assumed that weakly interacting Mn - ions in low symmetry site of host TlInS2 lead to the formation of spin cluster states, which can be considered as a precursor in preparation of new diluted magnetic semiconductor materials on the base of TlInS2 .