Improvement of write error rate in voltage-driven magnetization switching. (15th February 2019)

• Record Type: Journal Article
• Authors: Yamamoto, Tatsuya; Nozaki, Takayuki; Imamura, Hiroshi; Shiota, Yoichi; Tamaru, Shingo; Yakushiji, Kay; Kubota, Hitoshi; Fukushima, Akio; Suzuki, Yoshishige; Yuasa, Shinji
• Is Part Of: Journal of physics. Volume 52:Number 16(2019)
• Publication Date: 2019-02-15
• Subjects: MRAM -- VCMA -- magnetization switching; Physics -- Periodicals; 530
• DOI: 10.1088/1361-6463/ab03c2
• Languages: English
• ISSNs: 0022-3727

Abstract

Abstract: We investigate magnetization switching driven by the voltage-controlled magnetic anisotropy (VCMA) effect in two series of magnetic tunnel junctions with a Ta/CoFeB/MgO structure. We demonstrate that improved thermal stability as well as the VCMA effect make it possible to achieve write error rates lower than 10 −6 . We also show that the thermal stability of the free layer plays an important role in suppressing increased write errors due to precession-orbit transition induced by thermal fluctuation.