Cite
HARVARD Citation
Han, D. et al. (2019). Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis. Applied physics express. p. . [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Han, D. et al. (2019). Determination of internal quantum efficiency in GaInN-based light-emitting diode under electrical injection: carrier recombination dynamics analysis. Applied physics express. p. . [Online].