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Zhao 赵, S. et al. (2019). 1.8-kV circular AlGaN/GaN/AlGaN double-heterostructure high electron mobility transistor *Project supported by the National Key Research and Development Program of China (Grant No. 2016YFB0400100), the National Natural Science Foundation of China (Grant Nos. 11435010, 61474086, and 61804125), and the Natural Science Basic Research Program of Shaanxi Province, China (Grant No. 2016ZDJC-02).. Chinese physics B. p. . [Online].