Dielectric, optical and structural properties of Bi4V2−xSrxO11−δ (0.05≤x≤0.20). (October 2015)

• Record Type: Journal Article
• Authors: Gupta, Sakshi; Singh, K.
• Is Part Of: Journal of physics and chemistry of solids. Volume 85(2015:Oct.)
• Page Start: 18
• Page End: 25
• Publication Date: 2015-10
• Subjects: Dielectric properties -- X-ray methods -- Optical properties -- Defects.; Solids -- Periodicals; Solides -- Périodiques; Solids; Periodicals; 530.41
• DOI: 10.1016/j.jpcs.2015.04.014
• Languages: English
• ISSNs: 0022-3697

Abstract

Abstract: Composition Bi4 V2− x Sr x O11− δ (0.05≤ x ≤0.20) is synthesized by melt quench technique followed by heat treatment at 800 °C for 12 h. These compounds are characterised by X-ray diffraction, Fourier transform infrared (FTIR) spectroscopy, UV–visible spectroscopy, impedance spectroscopy and scanning electron microscopy. X-ray diffraction patterns of all the samples show γ-phase stabilization at room temperature except x =0.05 heat treated sample. The optical band gap of all the samples is observed in semiconducting range. The lowest and the highest optical band gap is 2.39 eV and 2.57 eV for x =0.10 heat treated and x =0.20 quenched samples, respectively. The highest value of dielectric constant is obtained ~10 7 with very low dielectric loss for x =0.15 and 0.20 samples at ~350 °C and below 10 Hz. The grain size increases with dopant concentration leads to increase the dielectric constant. Highlights: Non-Centro symmetric γ-phase stabilized at low Sr 2+ dopant concentration in Bi4 V2− x Sr x O11− δ . The optical band gap is observed in semiconducting range. Grain size decreases with dopant concentration. The value of dielectric constant is obtained ~10 7 with low dielectric loss.