Ionic Gating of Ultrathin and Leaky Ferroelectrics. Issue 5 (16th January 2019)

• Record Type: Journal Article
• Authors: Sharma, Yogesh; Wong, Anthony T.; Herklotz, Andreas; Lee, Dongkyu; Ievlev, Anton V.; Collins, Liam; Lee, Ho Nyung; Dai, Sheng; Balke, Nina; Rack, Philip D.; Ward, Thomas Z.
• Is Part Of: Advanced materials interfaces. Volume 6:Issue 5(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-01-16
• Subjects: device structure -- ferroelectrics -- ionic gating -- ionic liquids -- polarization switching; Materials science -- Periodicals; 620.11
• DOI: 10.1002/admi.201801723
• Languages: English
• ISSNs: 2196-7350

Abstract

Abstract : Ionic liquids are used to induce reversible large area polarization switching in ultrathin and highly defective ferroelectric films. Long range electrostatic charge control is induced by modifying the electric double layer at an ionic liquid–PbZr0.2 Ti0.8 O3 interface with electrostatic and electrochemical control of polarization orientation in the ferroelectric layer. The localized nature of the ionic gating mechanism prohibits the presence of leakage current, which has historically limited the switching of ultrathin and/or electrically leaky ferroelectric films in solid metal‐gated capacitor devices. This is demonstrated on ultrathin films and in massively defective films with >30% coverage of direct conducting channels running from surface to ground. This approach opens new design possibilities for integrating ultrathin ferroelectric films in functional electronic devices. Abstract : Large‐area reversible switching of polarization states in ferroelectric thin films is demonstrated using an interfaced ionic liquid. The ionic gating mechanism relies on localized interfacial charge from the electric double layer and allows both ultrathin and extremely leaky ferroelectric layers to be switched at millimeter scales with very low applied voltages.