Anomalous Hall Effect–Like Behavior with In‐Plane Magnetic Field in Noncollinear Antiferromagnetic Mn3Sn Films. (6th February 2019)

• Record Type: Journal Article
• Authors: You, Yunfeng; Chen, Xianzhe; Zhou, Xiaofeng; Gu, Youdi; Zhang, Ruiqi; Pan, Feng; Song, Cheng
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 3(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-02-06
• Subjects: anomalous Hall effect -- antiferromagnetic spintronics -- Mn3Sn film -- noncollinear antiferromagnet; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800818
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Magnetotransport is at the center of spintronics. Mn3 Sn single crystals, an antiferromagnet that has a noncollinear 120° spin order, exhibit large anomalous Hall effect (AHE) at room temperature. But such a behavior has remained elusive in epitaxial Mn3 Sn films. Here the observation of AHE‐like behavior with in‐plane magnetic field up to room temperature in quasi‐epitaxial Mn3 Sn thin films, prepared by magnetron sputtering, is reported. The growth of both (1120)‐ and (0001)‐oriented Mn3 Sn films provides a unique opportunity for comparing AHE‐like behavior in three different measurement configurations. When the magnetic field is swept along (0001) plane, such as the direction of [0110] and [2110], the films show comparatively higher Hall conductivity than its perpendicular counterpart [0001], irrespective of their respectively orthogonal current along [0001] or [0110]. A quite weak ferromagnetic moment of ≈3 emu cm −3 is obtained in (1120)‐oriented Mn3 Sn films, guaranteeing the switching of the Hall signals with magnetization reversal. This finding would advance the integration of Mn3 Sn in antiferromagnetic spintronics. Abstract : An anomalous Hall effect (AHE)‐like behavior is observed with an in‐plane magnetic field up to room temperature in 50 nm quasi‐epitaxial Mn3 Sn thin films, prepared by magnetron sputtering. The observed AHE‐like signals in the Mn3 Sn thin films stem from the chiral noncollinear 120° spin configuration of antiferromagnets rather than the direct magnetic moment change of ferromagnets.