BN as a Saturable Absorber for a Passively Mode‐Locked 2 µm Solid‐State Laser. Issue 3 (28th November 2018)

• Record Type: Journal Article
• Authors: Li, Linjun; Yang, Xining; Zhou, Long; Xie, Wenqiang; Bai, Yunfeng; Ye, Gangchao; Shen, Yingjie; Lv, Zhiwei; Zhang, Han; Chen, Minghua; Yang, Yuqiang; Yang, Wenlong; Duan, Xiaoming
• Is Part Of: Physica status solidi. Volume 13:Issue 3(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-28
• Subjects: average output power -- boron nitride -- passively Q‐switched -- passively mode‐locked -- saturable absorbers -- solid‐state laser; Solid state physics -- Periodicals; 530.4105
• DOI: 10.1002/pssr.201800482
• Languages: English
• ISSNs: 1862-6254

Abstract

Abstract : Boron nitride (BN) nanosheets are prepared using an ultrasonic decomposition method and demonstrated nonlinear absorption characteristics that saturated at near 2 µm. A passively mode‐locked Tm:YAP laser was perfectly implemented with the BN nanosheets as a saturable absorber (SA). In the passively Q‐switched mode‐locked mode, an average output power of 880 mW with a pulse duration of 478.83 ps was achieved using an incident pump power of 26.46 W, corresponding to an optical–optical conversion efficiency of 3.33%. A pulse peak power of 19.03 W was acquired at 1937.0 nm from the mode‐locked Tm:YAP laser. Abstract : BN nanosheets are prepared and demonstrate nonlinear absorption characteristics that saturate near 2 μm. A passively mode‐locked Tm:YAP laser is perfectly implemented with the BN nanosheets as a saturable absorber. An average output power of 880 mW and a pulse duration of 478.83 ps are achieved with a pulse peak power of 19.03 W in the experiment.