Controlling the Dirac point voltage of graphene by mechanically bending the ferroelectric gate of a graphene field effect transistor. Issue 2 (14th December 2018)

• Record Type: Journal Article
• Authors: Hu, Guangliang; Wu, Jingying; Ma, Chunrui; Liang, Zhongshuai; Liu, Weihua; Liu, Ming; Wu, Judy Z.; Jia, Chun-Lin
• Is Part Of: Materials horizons. Volume 6:Issue 2(2019)
• Page Start: 302
• Page End: 310
• Publication Date: 2018-12-14
• Subjects: Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c8mh01499j
• Languages: English
• ISSNs: 2051-6347

Abstract

Abstract : The linear shift in V Dirac of a flexible GFET, caused by the flexoelectric effect of a PLZT gate, makes it enormously useful for both tuning the graphene doping state and detecting bending curvature. Abstract : Controlling the Dirac point voltage of graphene is essential for realizing various practical applications of graphene. Here, control of the doping state is achieved in flexible graphene field effect transistors (GFETs) by applying mechanical bending stress. By gradually increasing the bending strain (the decrease of upward/downward bending radius), the Dirac point ( V Dirac ) linearly shifts to left/right, which is induced by the flexoelectric effect of the ferroelectric Pb0.92 La0.08 Zr0.52 Ti0.48 O3 (PLZT) gate. In addition, a superior mechanical antifatigue character is obtained in the flexible GFETs, and the doping effect is recoverable. The sensitivity to strain and high bending stability not only offer an easy, controllable and nonintrusive method to obtain a specific doping level in graphene for flexible electric devices, but also highlight the enormous potential of the flexible ferroelectric PLZT-gated GFETs as wearable sensors.