Cite
HARVARD Citation
Li, X. et al. (2019). GaN Schottky barrier diodes with nickel nitride anodes sputtered at different nitrogen partial pressure. Vacuum. pp. 72-77. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Li, X. et al. (2019). GaN Schottky barrier diodes with nickel nitride anodes sputtered at different nitrogen partial pressure. Vacuum. pp. 72-77. [Online].