GaN-based LSK demodulators for wireless data receivers in high-temperature applications. (February 2019)

• Record Type: Journal Article
• Authors: Hassan, Ahmad; Ali, Mohamed; Savaria, Yvon; Sawan, Mohamad
• Is Part Of: Microelectronics journal. Volume 84(2019)
• Page Start: 129
• Page End: 135
• Publication Date: 2019-02
• Subjects: High-temperature applications -- Wireless data transmission -- GaN HEMT -- Integrated circuits -- Demodulation system; Microelectronics -- Periodicals; Microélectronique -- Périodiques; Microelectronics; Electronic journals; Journals - contents and abstracts; Periodicals; 621.3805
• DOI: 10.1016/j.mejo.2019.01.006
• Languages: English
• ISSNs: 0959-8324

Abstract

Abstract: GaN (gallium nitride)-based fully-integrated demodulators are presented. These modules, intended for wireless applications, target high-temperature (HT) environments including monitoring devices in aerospace. The presented demodulators are dedicated to recover Load-shift keying signals modulating a low carrier frequency to maximize power transfer efficiency and increase data transmission rate through metallic barriers. Logic gates are implemented and successfully tested at HT exceeding 400 °C. Proposed demodulators are built from half and full bridge rectifiers, comparators, voltage references and inverters, and operate at a minimum carrier frequency (fc ) of 50 kHz. A demodulator based on a digital topology is proposed to cover MHz range fc . A complementary ±14 V supply voltage is required to operate the circuits. Reported post-layout simulation results validate the functionality and performance offered by the proposed demodulators over the 25 °C–400 °C temperature range. Also, a complete chip layout has been done, where the introduced demodulators occupy 10 mm 2 of a GaN die area.