A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating. Issue 8 (11th February 2019)
- Record Type:
- Journal Article
- Title:
- A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating. Issue 8 (11th February 2019)
- Main Title:
- A large-scale, ultrahigh-resolution nanoemitter ordered array with PL brightness enhanced by PEALD-grown AlN coating
- Authors:
- Peng, Mingzeng
Zheng, Xinhe
Liu, Sanjie
Wei, Huiyun
He, Yingfeng
Li, Meiling
An, Yunlai
Song, Yimeng
Qiu, Peng - Abstract:
- Abstract : A high-brightness III-nitride nanoemitter array was achieved with an ultrahigh resolution of 31 750 dpi for smart displays, advanced optical imaging, big-data optical information, and micro/nano opto-electro-mechanical systems. Abstract : III-nitride solid-state microdisplays have significant advantages, including high brightness and high resolution, for the development of advanced displays, high-definition projectors, head-mounted displays, large-capacity optical communication systems, and so forth. Herein, a high-brightness InGaN/GaN multiple-quantum-well (MQW) nanoemitter array with an ultrahigh resolution of 31 750 dpi was achieved by combining a top-down fabrication with surface passivation of plasma-enhanced atomic layer deposition (PEALD)-grown AlN coating. With regard to the nanometer-level top-down etching, the surface damage or defects on the newly-formed sidewall play a significant role in the photoluminescence (PL) quality. Note that these arrays can be effectively passivated by the PEALD-grown AlN coating with an over 345% PL enhancement. In addition, a sharp band bending at the interface of the luminescent InGaN QW and the AlN coating layer can electrically drift away the photogenerated electrons from the surface traps; this leads to enhancement of the bulk PL radiative recombination with a fast PL decay rate. Therefore, we have demonstrated a feasible way for realizing an advanced nanoemitter array with both high brightness and ultrahigh resolutionAbstract : A high-brightness III-nitride nanoemitter array was achieved with an ultrahigh resolution of 31 750 dpi for smart displays, advanced optical imaging, big-data optical information, and micro/nano opto-electro-mechanical systems. Abstract : III-nitride solid-state microdisplays have significant advantages, including high brightness and high resolution, for the development of advanced displays, high-definition projectors, head-mounted displays, large-capacity optical communication systems, and so forth. Herein, a high-brightness InGaN/GaN multiple-quantum-well (MQW) nanoemitter array with an ultrahigh resolution of 31 750 dpi was achieved by combining a top-down fabrication with surface passivation of plasma-enhanced atomic layer deposition (PEALD)-grown AlN coating. With regard to the nanometer-level top-down etching, the surface damage or defects on the newly-formed sidewall play a significant role in the photoluminescence (PL) quality. Note that these arrays can be effectively passivated by the PEALD-grown AlN coating with an over 345% PL enhancement. In addition, a sharp band bending at the interface of the luminescent InGaN QW and the AlN coating layer can electrically drift away the photogenerated electrons from the surface traps; this leads to enhancement of the bulk PL radiative recombination with a fast PL decay rate. Therefore, we have demonstrated a feasible way for realizing an advanced nanoemitter array with both high brightness and ultrahigh resolution for future smart displays, high-resolution imaging, big-data optical information systems and so on. … (more)
- Is Part Of:
- Nanoscale. Volume 11:Issue 8(2019)
- Journal:
- Nanoscale
- Issue:
- Volume 11:Issue 8(2019)
- Issue Display:
- Volume 11, Issue 8 (2019)
- Year:
- 2019
- Volume:
- 11
- Issue:
- 8
- Issue Sort Value:
- 2019-0011-0008-0000
- Page Start:
- 3710
- Page End:
- 3717
- Publication Date:
- 2019-02-11
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c8nr07946c ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 9552.xml