This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Field‐Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates (Small 7/2019). Issue 7 (15th February 2019)
Record Type:
Journal Article
Title:
Field‐Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates (Small 7/2019). Issue 7 (15th February 2019)
Main Title:
Field‐Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field‐Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement‐Mode Logic Gates (Small 7/2019)
Abstract : In article number1803852, Changhee Lee, Sung Hun Jin, and co‐workers develop an adjustment scheme for threshold voltage of multi‐layered MoS2 field effect transistors via octadecyltrichlorosilane treatment on the back channel of multi‐layered MoS2 . More impressively, enhancement‐mode MoS2 logic gates and active matrixed quantum dot pixels are successfully demonstrated, which can be potentially utilized for next‐generation device opportunities.