Cite
HARVARD Citation
He, H. et al. (2019). A flexible memory with low-voltage and high-operation speed using an Al2O3/poly(α-methylstyrene) gate stack on a muscovite substrate. Journal of materials chemistry. 7 (7), pp. 1913-1918. [Online].
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He, H. et al. (2019). A flexible memory with low-voltage and high-operation speed using an Al2O3/poly(α-methylstyrene) gate stack on a muscovite substrate. Journal of materials chemistry. 7 (7), pp. 1913-1918. [Online].