Intrinsically Stretchable Resistive Switching Memory Enabled by Combining a Liquid Metal–Based Soft Electrode and a Metal–Organic Framework Insulator. (28th November 2018)

• Record Type: Journal Article
• Authors: Yi, Xiaohui; Yu, Zhe; Niu, Xuhong; Shang, Jie; Mao, Guoyong; Yin, Tenghao; Yang, Huali; Xue, Wuhong; Dhanapal, Pravarthana; Qu, Shaoxing; Liu, Gang; Li, Run‐Wei
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 2(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-28
• Subjects: liquid metal -- metal–organic frameworks -- resistive switching -- stretchable memory; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800655
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Mechanical flexibility and electrical reliability establish the fundamental criteria for wearable and implantable electronic devices. In order to receive intrinsically stretchable resistive switching memories, both the electrode and storage media should be flexible yet retain stable electrical properties. Experimental results and finite element analysis reveal that the formation of 3D liquid metal galinstan (GaInSn) calabash bunch conductive network in poly(dimethyl siloxane) (PDMS) matrix allows GaInSn@PDMS composite as soft electrode with the stable conductivity of >1.3 × 10 3 S cm −1 at the stretching strains of >80% and a fracture strain extreme of 108.14%, while the third‐generation metal–organic framework MIL‐53 thin film with a facial rhombohedral topology enables large mechanical deformation up to a theoretical level of 17.7%. Combining the use of liquid metal–based electrode and MIL‐53 switching layer, for the first time, intrinsically stretchable RRAM device Ag/MIL‐53/GaInSn@PDMS is demonstrated that can exhibit reliable resistive switching characteristics at the strain level of 10%. The formation of fluidic gallium conductive filaments, together with the structural flexibility of the GaInSn@PDMS soft electrode and MIL‐53 insulating layer, accounts for the uniform resistive switching under stretching deformation scenario. Abstract : Intrinsically stretchable resistive switching memories are constructed with a GaInSn@ poly(dimethyl siloxane) soft composite electrode and a metal–organic framework MIL‐53 insulator. Reliable memory characteristics that can be sustained at the stretching strain of 10% are observed for the first time. The present finding suggests that organic–inorganic hybrid materials, either conducting or insulating, may play a crucial role in developing high‐performance intrinsically stretchable electronics.