Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures. (23rd November 2018)

• Record Type: Journal Article
• Authors: Lee, SangMyeong; Choi, Jaeho; Jeon, Jae Bum; Kim, Byeong Jo; Han, Ji Su; Kim, Taemin Ludvic; Jung, Hyun Suk; Jang, Ho Won
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 2(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-23
• Subjects: conducting bridges -- endurance -- halide perovskites -- resistive switching -- rubidium; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800586
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: Recently, halide perovskites (HPs), which exhibit resistive switching (RS) behaviors, are proposed as a promising candidate for next‐generation memory because of their low power consumption, low cost, and mechanical flexibility. However, HP‐based memories have crucial problems related to short endurance and vague switching mechanism. Here, the RS behaviors of switchable methylammonium lead iodide (MAPbI3 ) and nonswitchable rubidium lead iodide (RbPbI3 ) mixtures are reported and it is elucidated on the source of the switching phenomena. By controlling the ratio of rubidium iodide (RbI)/methylammonium iodide (MAI), five compositions of the mixture of RbPbI3 and MAPbI3 (Rb1− x MA x PbI3, x = 0, 0.31, 0.52, 0.71, and 1) films are fabricated. The mixtures of cubic MAPbI3 and orthorhombic RbPbI3 films exhibit excellent performances in Ag/polymethyl methacrylate/Rb1− x MA x PbI3 /Pt cells, with endurance of 10 3 cycles, a high on/off ratio of 10 6, and an operation speed of 640 µs. Plausible explanations for the switching mechanism are provided based on Ag bridges by using the combination of conductive atomic force microscopy and energy dispersive X‐ray spectroscopy. It is suggested nonswitchable RbPbI3 contributes to the endurance enhancement by restraining the growth of Ag bridges. The unique approaches provide a new strategy to overcome the bottleneck of the HP‐based RS memories for next‐generation computing. Abstract : A conducting bridge resistive switching behavior is found in mixtures of switchable (methylammonium (MA))PbI3 and nonswitchable orthorhombic RbPbI3 compared with that in MAPbI3 . Using combined conducting atomic force microscopy measurement and energy dispersive spectrometer element mapping, plausible explanations for the switching mechanism are provided with the Ag bridge. Nonswitchable orthorhombic RbPbI3 restrains the conduction filament.