Fluorine Substituted Bithiophene Imide‐Based n‐Type Polymer Semiconductor for High‐Performance Organic Thin‐Film Transistors and All‐Polymer Solar Cells (Solar RRL 2∕2019). Issue 2 (11th February 2019)

• Record Type: Journal Article
• Authors: Sun, Huiliang; Tang, Yumin; Guo, Han; Uddin, Mohammad Afsar; Ling, Shaohua; Wang, Ruizhi; Wang, Yingfeng; Zhou, Xin; Woo, Han Young; Guo, Xugang
• Is Part Of: Solar RRL. Volume 3:Issue 2(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-02-11
• Subjects: Solar energy -- Periodicals; Photovoltaic power generation -- Periodicals; Solar energy -- Research -- Periodicals; Photovoltaic power generation -- Research -- Periodicals; Periodicals; 333.7923
• DOI: 10.1002/solr.201970021
• Languages: English
• ISSNs: 2367-198X

Abstract

Abstract : In article no.1800265, Xugang Guo and co‐workers introduce F atoms to the Β‐position of bithiophene imide, generating a novel electron‐deficient building block s‐FBTI2, a well desired "stronger acceptor" for n‐type polymer semiconductors. The resulting semiconductor shows remarkable electron mobility, approaching 3.0 cm 2 V −1 s −1 in organic thin‐film transistors, and a promising power conversion efficiency of 6.50% in all‐polymer solar cells.