A Supramolecular Gel of Oxalic Acid‐Monoethanolamine for Potential Schottky Barrier Diode Application. Issue 4 (30th January 2019)

• Record Type: Journal Article
• Authors: Dhibar, Subhendu; Dey, Arka; Ghosh, Debasish; Majumdar, Santanu; Dey, Amiya; Mukherjee, Priyanka; Mandal, Amit; Ray, Partha Pratim; Dey, Biswajit
• Is Part Of: ChemistrySelect. Volume 4:Issue 4(2019)
• Page Start: 1535
• Page End: 1541
• Publication Date: 2019-01-30
• Subjects: Morphology -- Rheology -- Schottky barrier diode -- Semiconductor -- Supramolecular Gel; Chemistry -- Periodicals; 540.5
• DOI: 10.1002/slct.201803004
• Languages: English
• ISSNs: 2365-6549

Abstract

Abstract: A functional supramolecular gel of oxalic acid and monoethanolamine (OXMEA) has been achieved through direct instant mixing of N, N‐dimethyl formamide (DMF) solution of oxalic acid and pure monoethanolamine at room temperature under ambient condition. The rheological analysis established the viscoelastic semi‐solid type nature of mechanically stable OXMEA supramolecular gel. The morphological pattern, imaged through field emission scanning electron microscopic investigation, explores the bean‐seed like hierarchical architecture of the gel network. The semiconducting property of the gel was verified from band gap energy and conductivity estimation. The electrical charge transport property was also analyzed in the form of OXMEA gel based metal‐semiconductor junction thin film device. The obtained nonlinear current‐voltage characteristics of the device signify Schottky barrier diode nature of the synthesized gel. Overall, this work has been proof of development of semiconducting electronic device by OXMEA gel based gel medium. Abstract : Through the direct mixing of oxalic acid and monoethanolamine with N, N‐dimethylformamide solvent, a stable supramolecular gel (OXMEA) has been achieved. The mechanical stability of the gel was scrutinized by rheological analysis. The intriguing bean‐seed type morphology of OXMEA gel was observed by FESEM study. The experimentally found charge transport parameters of OXMEA‐thin film device are noteworthy to achieve the intriguing semiconductive feature i. e. the Schottky barrier diode application of OXMEA gel at room temperature.