Accurate and efficient analysis of the upward heat flow in InGaP/GaAs HBTs through an automated FEM‐based tool and Design of Experiments. (28th November 2018)

• Record Type: Journal Article
• Authors: d'Alessandro, Vincenzo; Catalano, Antonio Pio; Codecasa, Lorenzo; Zampardi, Peter J.; Moser, Brian
• Is Part Of: International journal of numerical modelling. Volume 32:Number 2(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-28
• Subjects: Design of Experiments (DOE) -- finite‐element method (FEM) -- gallium arsenide (GaAs) -- heterojunction bipolar transistor (HBT) -- thermal resistance -- thermal simulation; Electric networks -- Mathematical models -- Periodicals; Electronics -- Mathematical models -- Periodicals; 621.3011
• DOI: 10.1002/jnm.2530
• Languages: English
• ISSNs: 0894-3370

Abstract

Abstract: This paper presents an extensive analysis aimed at quantifying the impact of all the key technology parameters on the upward heat flow in state‐of‐the‐art InGaP/GaAs heterojunction bipolar transistors (HBTs) for various emitter areas and shapes. Extremely accurate thermal simulations are conducted in a relatively short time with a tool relying on a commercial 3‐D finite‐element method (FEM) solver and an in‐house routine for automated geometry construction, optimized mesh generation, sequential solution, and data storing/processing. Design of Experiments is used to define a thermal resistance model as a function of the aforementioned parameters on the basis of a few FEM data.