Strong electro-optically active Ni-substituted Pb(Zr0.35Ti0.65)O3 thin films: toward integrated active and durable photonic devices. Issue 47 (20th November 2018)

• Record Type: Journal Article
• Authors: Zhu, Minmin; Du, Zehui; Chng, Soon Siang; Tsang, Siu Hon; Teo, Edwin Hang Tong
• Is Part Of: Journal of materials chemistry. Volume 6:Issue 47(2018)
• Page Start: 12919
• Page End: 12927
• Publication Date: 2018-11-20
• Subjects: Materials -- Periodicals; Chemistry, Analytic -- Periodicals; Optical materials -- Research -- Periodicals; Electronics -- Materials -- Research -- Periodicals; 543.0284
• DOI: 10.1039/c8tc04576c
• Languages: English
• ISSNs: 2050-7526

Abstract

Abstract : Ferroelectric materials for precise control of light from lasers to optical communications have sparked great interest owing to their large electro-optic (EO) coefficients, low propagation loss, and fast switching time. Abstract : Ferroelectric materials for precise control of light from lasers to optical communications have sparked great interest owing to their large electro-optic (EO) coefficients, low propagation loss, and fast switching time. Here, we report the deposition of highly oriented Ni-doped lead zirconate titanate (PZT) thin films on glass substrates as a novel way to seamlessly connect the electrical, optical, and magnetic domain. Small dielectric dispersion, low dielectric loss, and a large dielectric constant ranging from 10 2 Hz to 10 6 Hz were observed at a Ni content of 0.5 mol%. These films show well-saturated ferroelectric hysteresis with a large spontaneous polarization (>30 μC cm −2 ) and a high Curie temperature (>350 °C). In addition, optical measurements indicate a large refractive index (∼2.43), a low propagation loss (∼4.14 dB cm −1 ), a fast response time (4.02 μs), and an effective EO coefficient (167.7 pm V −1 ), which are five times larger than those of the current standard material for EO devices (LiNbO3 ). More importantly, such films can work well up to 250 °C and retain above 80% of the EO performance at 10 4 Hz. Finally, the substitution of Ni 2+ at the Ti 4+ site shows distinct magnetic behaviors. The integration of EO active films could pave the way for future power-efficient, ultrafast switches, and compact integrated nanophotonic and magneto-optic devices.