A boron-interstitial doped C2N layer as a metal-free electrocatalyst for N2 fixation: a computational study. Issue 5 (16th January 2019)
- Record Type:
- Journal Article
- Title:
- A boron-interstitial doped C2N layer as a metal-free electrocatalyst for N2 fixation: a computational study. Issue 5 (16th January 2019)
- Main Title:
- A boron-interstitial doped C2N layer as a metal-free electrocatalyst for N2 fixation: a computational study
- Authors:
- Ji, Shuang
Wang, Zhongxu
Zhao, Jingxiang - Abstract:
- Abstract : The B-interstitial C2 N layer can be utilized as a novel metal-free electrocatalyst with high efficiency and selectivity for the NRR due to its low limiting potential and significant suppressing effect on the HER. Abstract : Electrochemical reduction of the naturally abundant nitrogen (N2 ) in aqueous solutions under ambient conditions is a quite promising way for ammonia (NH3 ) synthesis, in which the development of highly efficient electrocatalysts is a key scientific issue. Herein, by means of extensive density functional theory (DFT) computations, we proposed that a boron-interstitial (Bint )-doped C2 N layer can act as a metal-free electrocatalyst for N2 fixation and reduction to NH3 . Our computations revealed that the Bint -doped C2 N layer can sufficiently activate the N2 molecule through the "acceptance-donation" process due to its significant positive charge and magnetic moment on the B dopant. In particular, the subsequent N2 reduction reaction prefers to proceed via the enzymatic mechanism with a rather low limiting potential (−0.15 V), suggesting its superior catalytic performance for N2 reduction. Importantly, the Bint -doped C2 N layer possesses comparable stability to the experimentally available S-doped one and thus holds great promise for experimental synthesis. Thus, by carefully controlling the doping sites, the B-doped C2 N layer can be utilized as a quite promising metal-free catalyst with high-efficiency for N2 reduction, which may provideAbstract : The B-interstitial C2 N layer can be utilized as a novel metal-free electrocatalyst with high efficiency and selectivity for the NRR due to its low limiting potential and significant suppressing effect on the HER. Abstract : Electrochemical reduction of the naturally abundant nitrogen (N2 ) in aqueous solutions under ambient conditions is a quite promising way for ammonia (NH3 ) synthesis, in which the development of highly efficient electrocatalysts is a key scientific issue. Herein, by means of extensive density functional theory (DFT) computations, we proposed that a boron-interstitial (Bint )-doped C2 N layer can act as a metal-free electrocatalyst for N2 fixation and reduction to NH3 . Our computations revealed that the Bint -doped C2 N layer can sufficiently activate the N2 molecule through the "acceptance-donation" process due to its significant positive charge and magnetic moment on the B dopant. In particular, the subsequent N2 reduction reaction prefers to proceed via the enzymatic mechanism with a rather low limiting potential (−0.15 V), suggesting its superior catalytic performance for N2 reduction. Importantly, the Bint -doped C2 N layer possesses comparable stability to the experimentally available S-doped one and thus holds great promise for experimental synthesis. Thus, by carefully controlling the doping sites, the B-doped C2 N layer can be utilized as a quite promising metal-free catalyst with high-efficiency for N2 reduction, which may provide useful guidance for further facilitating sustainable NH3 synthesis. … (more)
- Is Part Of:
- Journal of materials chemistry. Volume 7:Issue 5(2019)
- Journal:
- Journal of materials chemistry
- Issue:
- Volume 7:Issue 5(2019)
- Issue Display:
- Volume 7, Issue 5 (2019)
- Year:
- 2019
- Volume:
- 7
- Issue:
- 5
- Issue Sort Value:
- 2019-0007-0005-0000
- Page Start:
- 2392
- Page End:
- 2399
- Publication Date:
- 2019-01-16
- Subjects:
- Materials -- Research -- Periodicals
Chemistry, Analytic -- Periodicals
Environmental sciences -- Research -- Periodicals
543.0284 - Journal URLs:
- http://pubs.rsc.org/en/journals/journalissues/ta ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c8ta10497b ↗
- Languages:
- English
- ISSNs:
- 2050-7488
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 5012.205100
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 9479.xml