Superiority of random inverted nanopyramid as efficient light trapping structure in ultrathin flexible c-Si solar cell. (April 2019)

• Record Type: Journal Article
• Authors: Tang, Quntao; Shen, Honglie; Yao, Hanyu; Gao, Kai; Jiang, Ye; Li, Yufang; Liu, Youwen; Zhang, Lei; Ni, Zhichun; Wei, Qingzhu
• Is Part Of: Renewable energy. Volume 133(2019)
• Page Start: 883
• Page End: 892
• Publication Date: 2019-04
• Subjects: Ultrathin c-Si solar cells -- Photovoltaic devices -- Metal assisted chemical etching -- Mask-less fabrication -- Inverted nanopyramids texturing -- Light management; Renewable energy sources -- Periodicals; Power resources -- Periodicals; Énergies renouvelables -- Périodiques; Ressources énergétiques -- Périodiques; 333.794
• DOI: 10.1016/j.renene.2018.10.063
• Languages: English
• ISSNs: 0960-1481

Abstract

Abstract: In this work, random inverted nanopyramids (INPs) are fabricated as light trapping structures on ultrathin c -Si through a simple and cost-effective wet chemical method, followed by a systematic investigation of the photo-capturing properties of INPs combining experiments and simulations. In comprehensive consideration of thickness loss and light trapping performance, random INPs are applied onto 45 μm ultrathin c -Si solar cell and a high short-current density (Jsc) (36.6 mA/cm 2 ) and energy-conversion efficiency (17.0%) are achieved, which are 0.3 mA/cm 2 and 0.13% respectively higher than that in micro pyramid textured one, and our electrical simulation also demonstrates that the advantages of INPs are more obvious on thinner c -Si compared with conventional micro pyramids. Finally, through electrical simulation, INPs textured 45 μm c -Si solar cell is expected to have a large improvement room for efficiency by controlling the front and rear surface recombination velocity. All the findings not only offer additional insight into the light-trapping mechanism in the random INPs but also provide controllable and efficient broadband light harvesters for next-generation cost effective flexible photovoltaics. Graphical abstract: Image 1 Highlights: Size control of IPs from nano to microscale was achieved by varying MACE temperature. Near-Yablonovitch limit absorptance was achieved on 45 μm c-Si by using random IPs. 45 μm random IPs cell achieve 36.6 mA/cm 2 current density and 17.0% efficiency. A theoretical efficiency of 26.3% can be on 45 μm c-Si by optimization.