Effect of solvent volume of CuAlO2 thin films for solar cell active layer. (2nd January 2016)

• Record Type: Journal Article
• Authors: Saravanakannan, V.; Radhakrishnan, T.
• Is Part Of: Surface engineering. Volume 32:Number 1(2016)
• Page Start: 21
• Page End: 25
• Publication Date: 2016-01-02
• Subjects: CuAlO2 -- Solvent volume -- Band gap -- Mobility; Surfaces (Technology) -- Periodicals; Coatings -- Periodicals; 620.4405
• DOI: 10.1179/1743294415Y.0000000045
• Languages: English
• ISSNs: 0267-0844

Abstract

Abstract : Copper aluminium oxide thin films were synthesised using the spray pyrolysis technique for different solvent volumes with a constant Cu/Al molar ratio. The preferential orientation is found along (100) and (102) planes, and the crystallite sizes are in the range from 21·6 to 28·4 nm. The structural studies reveal that the grown films were polycrystalline in nature. Hall effect results confirm that the grown films are p type. When the solvent volume is increased from 10 to 40 mL, the resistivity of the films decreases from 1·12 × 10 − 6 to 6·2 × 10 − 8 Ω cm. The band gap of the films increases with increasing the solvent volume. The obtained results show that the grown films can be used as the active layer in a solar cell.