Ultra-fast SRAM using spatial wave-function switched FET (SWSFET). Issue 1 (2nd January 2019)

• Record Type: Journal Article
• Authors: Karmakar, S.
• Is Part Of: International journal of electronics letters. Volume 7:Issue 1(2019)
• Page Start: 40
• Page End: 49
• Publication Date: 2019-01-02
• Subjects: FET -- SWSFET -- SRAM -- quantum well -- VLSI -- semiconductor; Electronics -- Periodicals; Electronics; Periodicals; 621.38105
• DOI: 10.1080/21681724.2018.1426108
• Languages: English
• ISSNs: 2168-1732

Abstract

ABSTRACT: Spatial wave-function switched field effect transistor (SWSFET) conducts through different channels within its structure. A successful model can explain the switching of charge population in different channels of SWSFET. The innovative circuit design using SWSFET can make only electron to participate in the circuit operation and design different fast circuit architecture. This letter discusses the design of ultra-fast static random access memory (SRAM) using SWSFET.