Asymmetric Resistive Switching Dynamics in BaTiO3 Tunnel Junctions. (14th November 2018)

• Record Type: Journal Article
• Authors: Qian, Mengdi; Fina, Ignasi; Sánchez, Florencio; Fontcuberta, Josep
• Is Part Of: Advanced Electronic Materials. Volume 5:Number 1(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-11-14
• Subjects: BaTiO3 films -- ferroelectric dynamics -- ferroelectric tunnel junctions -- memristors -- neuromorphic computing; Materials -- Electric properties -- Periodicals; Materials science -- Periodicals; Magnetic materials -- Periodicals; Electronic apparatus and appliances -- Periodicals; 537
• DOI: 10.1002/aelm.201800407
• Languages: English
• ISSNs: 2199-160X

Abstract

Abstract: The resistive switching associated with polarization reversal is studied in detail in ferroelectric BaTiO3 tunnel junctions, with focus on the dynamics of the ferroelectric domain switching. It is observed that the transition between the high‐resistance state (HRS) and the low‐resistance state (LRS) is largely asymmetric being smooth from LRS to HRS, but proceeds via avalanches in the HRS‐to‐LRS transitions. It is shown that this distinct behavior is related to the presence of an imprint field in the junction and has important consequences on the junction's performance. Abstract : Deterministic and smooth transitions are observed from low‐to‐high resistance states in ferroelectric junctions, but avalanche‐like behavior is observed in the reverse process. An imprint field breaks the symmetry of the junction and determines either a gradual nucleation and expansion of ferroelectric domains or sudden domain‐bundles switching and concomitantly, different resistive switching dynamics depending on the biasing electric field.