High‐Index‐Contrast λ = 1.55 μm AlInGaAs/InP Laser Heterostructure Waveguides Through Selective Core Oxidation. Issue 1 (7th October 2018)

• Record Type: Journal Article
• Authors: Tian, Yuan; Li, Jinyang; Kirch, Jeremy D.; Sigler, Chris; Mawst, Luke; Pelucchi, Emanuele; Peters, Frank H.; Hall, Douglas C.
• Other Names: Chowdhury Srabanti guestEditor.; Palacios Tomas guestEditor.; Xing Grace (Huili) guestEditor.
• Is Part Of: Physica status solidi. Volume 216:Issue 1(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-10-07
• Subjects: AlInGaAs -- InP dissociation -- lateral oxidation -- ridge waveguide -- telecommunication lasers; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201800495
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : A deep‐etched high‐index‐contrast ridge waveguide for low bend loss photonic integration is realized through selective lateral oxidation of a λ = 1.55 µm AlInGaAs multi‐quantum well diode laser heterostructure waveguide core layer sandwiched between InP cladding layers. The process is enabled by first depositing a thin protective layer to fully suppress the thermal dissociation of exposed InP surfaces during the subsequent oxygen‐enhanced wet thermal oxidation process. Either ≈30–100 nm of InGaAs grow through selective epitaxial regrowth via MOCVD or ≈6 Å of HfO2 grows via atomic layer deposition is found to be effective at preventing dissociation damage. A lateral oxidation depth of ≈1.0 µm is achieved with a 3 h oxidation at 525 °C, yielding a buried oxide high optical confinement waveguide with reduced capacitance and contact resistance, suitable for the integration of high‐speed, low‐bend loss integrated laser devices. Abstract : Deep‐etched ridge waveguides are realized in a telecom wavelength diode laser heterostructure through the selective lateral oxidation of ≈1.0 μm of the AlInGaAs waveguide core layer sandwiched between InP cladding layers. A thin protective layer – selective regrowth InGaAs or ALD HfO2 – prevents the thermal dissociation of InP at the 525 °C oxidation temperature.