Field Effect Transistors: Ionic‐Liquid Gating of InAs Nanowire‐Based Field‐Effect Transistors (Adv. Funct. Mater. 3/2019). (15th January 2019)

• Record Type: Journal Article
• Authors: Lieb, Johanna; Demontis, Valeria; Prete, Domenic; Ercolani, Daniele; Zannier, Valentina; Sorba, Lucia; Ono, Shimpei; Beltram, Fabio; Sacépé, Benjamin; Rossella, Francesco
• Is Part Of: Advanced functional materials. Volume 29:Number 3(2019)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2019-01-15
• Subjects: electric double layers -- field‐effect transistors -- ionic‐liquid gating -- InAs nanowires; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adfm.201970014
• Languages: English
• ISSNs: 1616-301X

Abstract

Abstract : In article number1804378, Francesco Rossella and co‐workers describe a single n‐type InAs nanowire, electrically contacted, which is surrounded by an ionic liquid – a neutral ensemble of positive and negative ions, liquid at room temperature. A large metallic electrode forces the positive ions to wrap the nanowire. The resulting electric field induces electron accumulation in the nanowire. The ionic liquid gating outstandingly drives the nanowire based field effect transistor.