Chemically non-perturbing SERS detection of a catalytic reaction with black silicon. Issue 20 (16th May 2018)
- Record Type:
- Journal Article
- Title:
- Chemically non-perturbing SERS detection of a catalytic reaction with black silicon. Issue 20 (16th May 2018)
- Main Title:
- Chemically non-perturbing SERS detection of a catalytic reaction with black silicon
- Authors:
- Mitsai, E.
Kuchmizhak, A.
Pustovalov, E.
Sergeev, A.
Mironenko, A.
Bratskaya, S.
Linklater, D. P.
Balčytis, A.
Ivanova, E.
Juodkazis, S. - Abstract:
- Abstract : All-dielectric resonant nanostructures made of high-index dielectrics have recently emerged as a promising surface-enhanced Raman scattering platform which can complement or replace the metal-based counterparts in routine sensing measurements. Abstract : All-dielectric resonant micro- and nano-structures made of high-index dielectrics have recently emerged as a promising surface-enhanced Raman scattering (SERS) platform which can complement or potentially replace the metal-based counterparts in routine sensing measurements. These unique structures combine the highly-tunable optical response and high field enhancement with the non-invasiveness, i.e. chemically non-perturbing the analyte, simple chemical modification and recyclability. Meanwhile, commercially competitive fabrication technologies for mass production of such structures are still missing. Here, we attest a chemically inert black silicon (b-Si) substrate consisting of randomly-arranged spiky Mie resonators for a true non-invasive (chemically non-perturbing) SERS identification of the molecular fingerprints at low concentrations. Based on the comparative in situ SERS tracking of the para -aminothiophenol (PATP)-to-4, 4′-dimercaptoazobenzene (DMAB) catalytic conversion on the bare and metal-coated b-Si, we justify the applicability of the metal-free b-Si for ultra-sensitive non-invasive SERS detection at a concentration level as low as 10 −6 M. We performed supporting finite-difference time-domain (FDTD)Abstract : All-dielectric resonant nanostructures made of high-index dielectrics have recently emerged as a promising surface-enhanced Raman scattering platform which can complement or replace the metal-based counterparts in routine sensing measurements. Abstract : All-dielectric resonant micro- and nano-structures made of high-index dielectrics have recently emerged as a promising surface-enhanced Raman scattering (SERS) platform which can complement or potentially replace the metal-based counterparts in routine sensing measurements. These unique structures combine the highly-tunable optical response and high field enhancement with the non-invasiveness, i.e. chemically non-perturbing the analyte, simple chemical modification and recyclability. Meanwhile, commercially competitive fabrication technologies for mass production of such structures are still missing. Here, we attest a chemically inert black silicon (b-Si) substrate consisting of randomly-arranged spiky Mie resonators for a true non-invasive (chemically non-perturbing) SERS identification of the molecular fingerprints at low concentrations. Based on the comparative in situ SERS tracking of the para -aminothiophenol (PATP)-to-4, 4′-dimercaptoazobenzene (DMAB) catalytic conversion on the bare and metal-coated b-Si, we justify the applicability of the metal-free b-Si for ultra-sensitive non-invasive SERS detection at a concentration level as low as 10 −6 M. We performed supporting finite-difference time-domain (FDTD) calculations to reveal the electromagnetic enhancement provided by an isolated spiky Si resonator in the visible spectral range. Additional comparative SERS studies of the PATP-to-DMAB conversion performed with a chemically active bare black copper oxide (b-CuO) substrate as well as SERS detection of the slow daylight-driven PATP-to-DMAB catalytic conversion in the aqueous methanol solution loaded with colloidal silver nanoparticles (Ag NPs) confirm the non-invasive SERS performance of the all-dielectric crystalline b-Si substrate. A proposed SERS substrate can be fabricated using the easy-to-implement scalable technology of plasma etching amenable on substrate areas over 10 × 10 cm 2 making such inexpensive all-dielectric substrates promising for routine SERS applications, where the non-invasiveness is of high importance. … (more)
- Is Part Of:
- Nanoscale. Volume 10:Issue 20(2018)
- Journal:
- Nanoscale
- Issue:
- Volume 10:Issue 20(2018)
- Issue Display:
- Volume 10, Issue 20 (2018)
- Year:
- 2018
- Volume:
- 10
- Issue:
- 20
- Issue Sort Value:
- 2018-0010-0020-0000
- Page Start:
- 9780
- Page End:
- 9787
- Publication Date:
- 2018-05-16
- Subjects:
- Nanoscience -- Periodicals
Nanotechnology -- Periodicals
620.505 - Journal URLs:
- http://www.rsc.org/Publishing/Journals/NR/Index.asp ↗
http://www.rsc.org/ ↗ - DOI:
- 10.1039/c8nr02123f ↗
- Languages:
- English
- ISSNs:
- 2040-3364
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 9830.266000
British Library DSC - BLDSS-3PM
British Library STI - ELD Digital store - Ingest File:
- 9387.xml