Monolithic 3D CMOS Using Layered Semiconductors. Issue 13 (2nd February 2016)

• Record Type: Journal Article
• Authors: Sachid, Angada B.; Tosun, Mahmut; Desai, Sujay B.; Hsu, Ching‐Yi; Lien, Der‐Hsien; Madhvapathy, Surabhi R.; Chen, Yu‐Ze; Hettick, Mark; Kang, Jeong Seuk; Zeng, Yuping; He, Jr‐Hau; Chang, Edward Yi; Chueh, Yu‐Lun; Javey, Ali; Hu, Chenming
• Is Part Of: Advanced materials. Volume 28:Issue 13(2016)
• Page Start: 2547
• Page End: 2554
• Publication Date: 2016-02-02
• Subjects: metal oxide semiconductors -- monolithic 3D integration -- transition metal dichalcogenides -- ultra‐low voltage operation; Materials -- Periodicals; Chemical vapor deposition -- Periodicals; 620.11
• DOI: 10.1002/adma.201505113
• Languages: English
• ISSNs: 0935-9648

Abstract

Abstract : Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low‐temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high‐density, ultralow‐voltage, and ultralow‐power applications.