Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes. Issue 32 (21st June 2017)
- Record Type:
- Journal Article
- Title:
- Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes. Issue 32 (21st June 2017)
- Main Title:
- Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes
- Authors:
- Zhang, Lili
Sun, Dong‐Ming
Hou, Peng‐Xiang
Liu, Chang
Liu, Tianyuan
Wen, Jianfeng
Tang, Nujiang
Luan, Jian
Shi, Chao
Li, Jin‐Cheng
Cong, Hong‐Tao
Cheng, Hui‐Ming - Abstract:
- Abstract : A major obstacle for the use of single‐wall carbon nanotubes (SWCNTs) in electronic devices is their mixture of different types of electrical conductivity that strongly depends on their helical structure. The existence of metal impurities as a residue of a metallic growth catalyst may also lower the performance of SWCNT‐based devices. Here, it is shown that by using silicon oxide (SiO x ) nanoparticles as a catalyst, metal‐free semiconducting and metallic SWCNTs can be selectively synthesized by the chemical vapor deposition of ethanol. It is found that control over the nanoparticle size and the content of oxygen in the SiO x catalyst plays a key role in the selective growth of SWCNTs. Furthermore, by using the as‐grown semiconducting and metallic SWCNTs as the channel material and source/drain electrodes, respectively, all‐SWCNT thin‐film transistors are fabricated to demonstrate the remarkable potential of these SWCNTs for electronic devices. Abstract : Semiconducting and metallic single‐wall carbon nanotubes (SWCNTs) are controllably synthesized using silicon oxide nanoparticles with tuned oxygen deficiencies as a catalyst. Totally metal‐free, all‐SWCNT thin‐film transistors are fabricated using the as‐grown semiconducting and metallic SWCNTs as channel and source/drain electrodes, respectively, which demonstrates desirable overall performance.
- Is Part Of:
- Advanced materials. Volume 29:Issue 32(2017)
- Journal:
- Advanced materials
- Issue:
- Volume 29:Issue 32(2017)
- Issue Display:
- Volume 29, Issue 32 (2017)
- Year:
- 2017
- Volume:
- 29
- Issue:
- 32
- Issue Sort Value:
- 2017-0029-0032-0000
- Page Start:
- n/a
- Page End:
- n/a
- Publication Date:
- 2017-06-21
- Subjects:
- carbon nanotubes -- chemical vapor deposition -- metal‐free -- selective synthesis -- thin‐film transistors
Materials -- Periodicals
Chemical vapor deposition -- Periodicals
620.11 - Journal URLs:
- http://onlinelibrary.wiley.com/journal/10.1002/(ISSN)1521-4095 ↗
http://onlinelibrary.wiley.com/ ↗ - DOI:
- 10.1002/adma.201605719 ↗
- Languages:
- English
- ISSNs:
- 0935-9648
- Deposit Type:
- Legaldeposit
- View Content:
- Available online (eLD content is only available in our Reading Rooms) ↗
- Physical Locations:
- British Library DSC - 0696.897800
British Library DSC - BLDSS-3PM
British Library HMNTS - ELD Digital store - Ingest File:
- 9353.xml