13‐3: Top‐emitting Quantum‐dot Light‐emitting Diodes with all the p‐i‐n Functional Layers Deposited by Solution Processes. Issue 1 (2nd June 2017)

• Record Type: Journal Article
• Authors: Jiang, Yibin; Chen, Shuming; Kwok, Hoi-Sing
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 161
• Page End: 164
• Publication Date: 2017-06-02
• Subjects: quantum-dot light-emitting diodes -- top-emitting -- spin-coating -- all-solution-processed; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11606
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : A green top‐emitting quantum‐dot light‐emitting diode (TQLED) with conventional structure is demonstrated in this study with all its functional layers, including hole transportation layer, emitting layer and electron transportation layer, fabricated by spin‐coating processes. This green QLED exhibits an external quantum efficiency (EQE) of 6.4 % and a maximum brightness of 200000 cd/m 2, which is the highest values reported for green TQLEDs in literature. Besides, this is the first report of all‐solution‐processed TQLEDs.