P‐76: Effect of a‐IGZO Thickness Variation on Device Uniformity and Drain Currents for Dual and Single Gate Driving TFTs. Issue 1 (2nd June 2017)

• Record Type: Journal Article
• Authors: Billah, Mohammad Masum; Hasan, Md Mehedi; Jeong, Duk Young; Um, Jae Gwang; Jang, Jin
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 1528
• Page End: 1531
• Publication Date: 2017-06-02
• Subjects: Amorphous-indium-gallium-zinc-oxide (a-IGZO) -- thin-film transistor (TFT) -- Single gate (SG) -- Dual gate (DG) -- Dual gate driving (DG-driving) -- Technology computer-aided design (TCAD); Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11940
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : We studied the effect of a‐IGZO thickness (tIGZO ) on device uniformity and drain current (ID ) of a‐IGZO thin‐film‐transistors (TFTs) driven by the single gate (SG) and dual‐gate driving (DG‐driving). Numerical simulation using fitting density‐of‐states (DOS) exhibits ~5 times larger ID and excellent uniformity with DG‐driving TFTs for a‐IGZO tIGZO <20 nm than SG‐TFT and enables the opportunity of high yield backplanes using DG‐TFTs for next generation high‐performance display applications.