P‐9: Parylene / Al2O3 Double Layer Passivated Amorphous InGaZnO Thin‐Film Transistors. Issue 1 (2nd June 2017)

• Record Type: Journal Article
• Authors: Zhou, Xiaoliang; Wang, Gang; Shao, Yang; Zhang, Letao; Lu, Huiling; Chen, Shuming; Han, Dedong; Wang, Yi; Zhang, Shengdong
• Is Part Of: Digest of technical papers. Volume 48:Issue 1(2017)
• Page Start: 1258
• Page End: 1261
• Publication Date: 2017-06-02
• Subjects: amorphous oxide semiconductor -- thin-film transistors -- parylene -- Al2O3 -- passivation; Information display systems -- Congresses; 621.3815422
• DOI: 10.1002/sdtp.11858
• Languages: English
• ISSNs: 0097-966X

Abstract

Abstract : Amorphous InGaZnO thin‐film transistors (a‐IGZO TFTs) passivated by parylene / Al2 O3 double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during Al2 O3 sputtering. Al2 O3 blocks O2 and water effectively. It is shown that a‐IGZO TFTs with the proposed passivation are stable in the ambient atmosphere.