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HARVARD Citation
Lu, X. et al. (2017). 21‐2: Highly Reliable Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with Back‐Channel‐Etch Structure. Digest of technical papers. 48 (1), pp. 291-293. [Online].
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Lu, X. et al. (2017). 21‐2: Highly Reliable Amorphous Indium‐Gallium‐Zinc‐Tin‐Oxide TFTs with Back‐Channel‐Etch Structure. Digest of technical papers. 48 (1), pp. 291-293. [Online].