Modelling and simulation tools for nanoscale transistor sizing. (2018)

• Record Type: Journal Article
• Authors: Rjoub, Abdoul; AlKattab, Shihab
• Is Part Of: International journal of simulation and process modelling. Volume 13:Number 3(2018)
• Page Start: 210
• Page End: 220
• Publication Date: 2018
• Subjects: delay time optimisation -- DELOTS algorithm -- leakage optimisation -- low power design -- PDP optimisation; Management -- Computer simulation -- Periodicals; Mathematical models -- Periodicals; Operations research -- Periodicals; Simulation methods -- Periodicals; 003.05
• Languages: English
• ISSNs: 1740-2123

Abstract

A new simulation model based on artificial intelligence techniques optimises the width of transistor at nanoscale level in order to reduce the power delay product is presented in this paper. The proposed model is composed from three models: graph model (GM), mathematical model (MM) and heuristic model (HM). These models cooperate together homogeneously to enhance the performance and reduce the power dissipation by selecting the optimal transistor's width for each transistor in the circuit. Measurements and simulation results of the new model have been performed under 22 nm BSIM4 foundries. The average improvement in power delay product was 31% for 24-transistor full adder circuit and 43% 18-transistor C17 ISCAS benchmark circuit. The proposed model is called delay enhancement and leakage optimisation based on transistor sizing that will be appeared as (DELOTS) in the rest of the paper.