Enhanced NO2 Sensing Property of ZnO by Ga Doping and H2 Activation. Issue 11 (12th March 2018)

• Record Type: Journal Article
• Authors: Wang, Zhou; Xie, Zheng; Bian, Luozhen; Li, Wenhui; Zhou, Xinyuan; Wu, Xiaofeng; Yang, Zaixing; Han, Ning; Zhang, Jie; Chen, Yunfa
• Is Part Of: Physica status solidi. Volume 215:Issue 11(2018)
• Page Start: n/a
• Page End: n/a
• Publication Date: 2018-03-12
• Subjects: Ga‐doped ZnO -- gas sensors -- H2 activation -- high response and selectivity -- NO2; Solid state physics -- Periodicals; Solids -- Industrial applications -- Periodicals; 530.41
• DOI: 10.1002/pssa.201700861
• Languages: English
• ISSNs: 1862-6300

Abstract

Abstract : Ga‐doped ZnO nanoparticles are successfully prepared by a facile coprecipitation method and then are activated by H2 annealing. The as‐prepared ZnO powders are characterized by X‐ray diffractometer (XRD), Brunauer–Emmett–Teller (BET), high resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), X‐ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies. Gas sensing property using NO2 as probe shows that the 1 at.% Ga‐ZnO powders activated in H2 at 540 °C showed high NO2 response of ≈50/ppm, high selectivity toward typical interferences such as ethanol, acetone, toluene, NO, SO2, C2 H6, and C2 H4 and high stability as measured at 200 °C. On the contrary, the pure ZnO and the Ga‐ZnO without H2 activation show far lower response, which illustrates the effect of Ga dopant activation by H2 annealing aimed for the high performance gas sensing materials. Abstract : Ga is an effective dopant for ZnO aimed for NO2 gas sensing, especially after reduced in H2 to activate the donors. The activated Ga‐doped ZnO shows high response of 250 to 5 ppm NO2, high selectivity over toluene, acetone, ethanol, ethane, ethylene, NO and SO2, and also high stability.