Cite
HARVARD Citation
Kempisty, P. et al. (2019). Chemical inactivity of GaN(0001) surface – The role of oxygen adsorption – Ab initio picture. Materials science in semiconductor processing. pp. 252-259. [Online].
This is an interim version of our Electronic Legal Deposit Catalogue-eJournals and eBooks while we continue to recover from a cyber-attack.
Kempisty, P. et al. (2019). Chemical inactivity of GaN(0001) surface – The role of oxygen adsorption – Ab initio picture. Materials science in semiconductor processing. pp. 252-259. [Online].